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2024 Research Needs Document: Nanomanufacturing Materials and Processes
Semiconductor Research Corp. (SRC)
Research Triangle Park, NC 27703
Table 1.1 list topics with the expectation that proponents will address corresponding challenges in those areas and articulate how their proposed research may advance the state of the art in terms of quantitative holistic critical metric goals for the proposed project(s). The proposals should include justifications and benchmarks of the proposed approaches based on theoretical, modeling, and or experimental evidence. Researchers are encouraged to refer to the sections of the MAPT Roadmap listed in Table 1.1 to understand the relevance of the research topic to industry. Proposals on other research topics beyond those listed in Table 1.1 but addressing challenges identified in the MAPT roadmap section 4.3 and in Table 1.2 are also considered as part of this solicitation.
Table 1.1
Area of Interest |
Research Topic |
MAPT Roadmap Oct 2023 ed. Reference Sections |
3D Heterogenous Integration |
Hybrid nanocomposite material with high heat dissipation and high reliability for advanced packaging. |
Section 7.5 Materials |
3D Monolithic Integration |
Materials and Processes for 3D Monolithic Integration. |
|
Back End Processes |
High mobility back end of the line (BEOL) compatible p-type semiconductor thin films. |
Section 4.3.1.1 Channel Materials |
Synthesis, deposition of BEOL-compatible semiconducting oxides P and N type. |
Section 4.3.5.2 Atomic Scale Processing, including Atomic Layer Deposition and Atomic Layer Etching |
|
Explore the theoretical limitation for metal/Si, metal/Ge contact resistance. |
Section 4.3.1.1 Possible Solutions - New materials enable reduction of parasitic resistance, capacitance, and device self-heating |
|
Back End Processes, 3D Monolithic Integration |
Low-k dielectrics and processing for good thermal conductivity. |
Section 4.3.2 On-die Interconnects - Possible Solutions |
Front End Processes |
CNT sorting by chirality and assembly. |
Section 4.3.3 Two Dimensional Materials - Possible Solutions |
Defect free wafer-scale processes for 2D materials (TMD, graphene). |
Section 4.3.3 Two Dimensional Materials Roadblocks and Challenges |
|
Front End Processes |
Low contact resistance for 2D materials <10-9 ohm-cm. |
Section 4.3.3 Two Dimensional Materials - Roadblocks and Challenges |
CMOS-compatible, low-thermal budget deposition and crystallization of device-quality semiconducting channel regions for high-performance devices. |
Section 4.3.1 - Feature size scaling, Channel materials |
|
Ultra-low temp epitaxial technology. |
Section 4.3.5.2 Atomic Scale Processing, including Atomic Layer Deposition and Atomic Layer Etching |
|
Chemistry and process development for Area Selective Deposition. |
Section 4.3.5.2 Atomic Scale Processing, including Atomic Layer Deposition and Atomic Layer Etching |
|
3D Monolithic Integration |
CMOS-compatible materials and structures for heat-spreading, seeking breakthroughs in chip-level / block-level temperature uniformity. |
Table 7.3 - Heat spreaders |
Metrology |
Metrology |
|
Patterning |
High NA Lithography & Directed Self Assembly. |
Section 4.3.5.1 High NA Lithography and Directed Self Assembly - Challenges: Thin polymer & Metal oxide resist |
Photonics |
Novel materials and processes for high performance Si photonics components including e.g. modulators, detectors, lasers. |
Section 6.5, Table 6.1 |
Table 1.2
Area of Interest |
Research Topic |
3D Heterogenous Integration |
3DI/Wafer Bonding: Alternative bonding materials and modeling/simulation. |
Back End Processes |
Reliability studies for novel BEOL barrier/liner materials that complements resistance studies, and the creation of novel quick turn monitors for reliability & performance studies. |
Back End Processes |
Corrosion inhibitor wet etch and CMP chemistry on metals beyond Cu. |
Front End Processes |
Novel gate materials for n-type work function metals (WFM). |
Front End Processes |
High-aspect- ratio, high-selectivity etching of with or without direct line of sight of dielectrics, metals, semiconductors, or related film stacks. |
Front End Processes |
Crystal epitaxy growth on insulator layer. |
Front End Processes |
Understanding and measuring the physical and chemical behavior of liquids in highly confined spaces. |
Direct links to the chapters in MAPT Roadmap
Chapter 4: https://srcmapt.org/chapter4/
Chapter 6: https://srcmapt.org/chapter6/
Chapter 7: https://srcmapt.org/chapter7/
Chapter 10: https://srcmapt.org/chapter10/
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